MP6Z3 transistors rev.a 1/6 medium power transistor (60v, 3a) MP6Z3 z features 1) high speed switching. (t f : typ. : 30ns at ic= 3a) 2) low saturation voltage, typically (typ. : 200mv at ic = 2a, i b = 200ma) 3) strong discharge power for inductive load and capacitance load. 4) contains 2sc5824-die and 2sa2071-die in a package. z applications low frequency amplifier high speed switching z structure silicon epitaxial planar transistor z dimensions (unit : mm) mpt6 (6) (5) (4) (1) (2) (3) z z packaging specifications z inner circuit package code tr 1000 taping basic ordering unit(pieces) MP6Z3 type z z absolute maximum ratings (ta=25 q c) ? 1 v v cbo 60 v v ceo 60 a i c 3 a i cp 6 w / total p d 2.0 w / element 1.4 c t j c tstg tr1 ? 60 ? 60 ? 3 ? 6 tr2 collector-base voltage collector-emitter voltage v v ebo 6 ? 6 emitter-base voltage collector current power dissipation junction temperature range of storage temperature continuous pulsed ? 1 pw=10ms 1 pulse ? 2 mounted on a ceramic board ? 2 150 ? 55 to 150 parameter symbol limits unit (1) (1) emitter (2) base (3) collector (4) emitter (5) base (6) collector (2) (3) (6) (5) (4)
MP6Z3 transistors rev.a 2/6 z electrical characteristics (ta=25 q c) parameter symbol bv ceo bv cbo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. 60 60 6 ? ? 120 ? ? ? ? ? ? ? ? 200 ? 200 20 ? ? ? 1.0 1.0 270 500 ? ? vi c = 1ma i c = 100 a i e = 100 a v cb = 40v v eb = 4v v ce = 2v, i c = 100ma v ce = 10v, i e =? 100ma, f = 10mhz ? 1 ? 2 ? 2 ? 2 ? 1 i c = 2.0a, i b = 0.2a v cb = 10v, i e = 0a, f = 1mhz v v a a ? mv mhz pf t on ? 50 ? i c = 3a ns t stg ? 150 ? i b1 = 300ma i b2 = ? 300ma ns t f ? 30 ? v cc 25v ns typ. max. unit conditions ? collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector cut off current emitter cut off current dc current gain collector-emitter saturation voltage transition frequency collector output capacitance turn-on time storage time fall time ? 1 pulsed ? 2 see switching time test circuit parameter symbol bv ceo bv cbo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. ? 60 ? 60 ? 6 ? ? 120 ? ? ? ? ? ? ? ? ? 200 ? 180 50 ? ? ? ? 1.0 ? 1.0 270 ? 500 ? ? vi c = ? 1ma i c = ? 100 a i e = ? 100 a v cb = ? 40v v eb = ? 4v v ce = ? 2v, i c = ? 100ma v ce = ? 10v, i e = 100ma, f = 10mhz ? 1 ? 2 ? 2 ? 2 ? 1 i c = ? 2.0a, i b = ? 0.2a v cb = ? 10v, i e = 0a, f = 1mhz v v a a ? mv mhz pf t on ? 20 ? i c = ? 3a ns t stg ? 150 ? i b1 = ? 300ma i b2 = 300ma ns t f ? 20 ? v cc ? 25v ns typ. max. unit conditions ? collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector cut off current emitter cut off current dc current gain collector-emitter saturation voltage transition frequency collector output capacitance turn-on time storage time fall time ? 1 pulsed ? 2 see switching time test circuit
MP6Z3 transistors rev.a 3/6 z electrical characteristics curves = u s 2 ? v ce = 2v 0.01 0.1 10 1 collector current : i c (a) base to emitter voltage : v be (v) 0 0.5 1 1.5 2 fig.1 ground emitter propagation characteristics ta = 100 c ta = 125 c ta = 25 c ta = ? 40 c 0.001 0.01 0.1 10 1 1 10 100 1000 collector current : i c (a) dc current gain : h fe v ce = 5v v ce = 3v v ce = 2v fig.3 dc current gain vs. collector current ta = 25 c fig.4 dc current gain vs. collector current ( ? ) collector current : i c (a) dc current gain : h fe 0.001 0.01 0.1 10 1 1 10 100 1000 ta = 125 c ta = 100 c ta = 25 c ta = ? 40 c v ce = 2v 0.001 0.1 0.01 10 1 0.01 0.1 1 10 collector current : i c ( a) collector saturation voltage : v ce ( sat)(v) fig.5 collector-emitter saturation voltage vs. collector current ( ) i c /i b = 10/1 i c /i b = 20/1 ta = 25 c 0.001 0.01 0.1 0.01 0.1 1 10 collector saturation voltage : v ce (sat )(v) collector current : i c (a) 10 1 fig.6 collector-emitter saturation voltage vs. collector current ( ? ) i c /i b = 10/1 ta = 125 c ta = 100 c ta = 25 c ta = ? 40 c collector current : i c (a) base emitter saturation voltage : v be (sat ) (v) fig.7 base-emitter saturation voltage vs. collector current 0.001 0.01 0.1 10 1 10 1 0.1 ta = 100 c ta = 125 c i c /i b = 10/1 ta = 25 c ta = ? 40 c 1000 transition frequency : f t (mhz) emitter current : i e (a ) ? 10 ? 1 ? 0.1 ? 0.01 ? 0.001 100 10 1 fig.8 transition frequency ta = 25 c v ce = 10v 100 collector output capacitance : c ob ( pf) collector to base voltage : v cb ( v) 100 10 1 0.1 10 1 fig.9 collector output capacitance ta = 25 c f = 1mhz fig.2 grounded emitter output characteristics 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.00.51.01.52.0 i b =1ma i b =2ma i b =0ma i b =3ma i b =4ma i b =5ma i b =6ma i b =7ma i b =8ma i b = 9ma i b =10ma collector to emitter voltage b v ce (v) collector current b ic(a)
MP6Z3 transistors rev.a 4/6 fig.10 switching time 1 0.01 0.1 10 1000 100 10 collector current : i c (a) switching time (ns) ta = 25 c v cc = 25v i c /i b = 10/1 tstg tf ton z z switching characteristics measurement circuits collector current waveform base current waveform i b1 i b1 90% 10% i b2 i b2 i c v in p w i c r l =8.3 v cc 25v p w 50 s duty cycle 1% ton tstg tf 0.01 0.1 1 10 0.001 0.1 10 1000 pulse width : pw(s) normalized transient thermal resistance : r(t ) ta=25 =? fig.12 safe operating area fig.11 normalized thermal resistance (element) 0.01 0.1 1 10 :?:?:? :? :?:? :?:?:? collector to emitter voltage : v ce (v) collector current : i c (a) 1ms 10ms 100ms dc ta=25 =? sing le pulse
MP6Z3 transistors rev.a 5/6 0 ? 0.5 ? 1 ? 1.5 base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics ? 0.01 ? 0.1 ? 1 collector current : i c (a) ? 10 v ce = ? 2v ta = ? 40 c ta = 25 c ta = 125 c z z electrical characteristics curves = u s 3 ? ? 0.001 ? 0.01 ? 0.1 ? 1 ? 10 collector current : i c (a) fig.3 dc current gain vs. collector current ( ) 1 10 100 dc current gain : h fe 1000 ta = 25 c v ce = ? 5v v ce = ? 3v v ce = ? 2v i c /i b = 10/1 ta = 25 c ? 0.001 ? 0.01 ? 0.1 ? 1 ? 10 collector current : i c (a) fig.5 collector-emitter saturation voltage vs. collector current ( ) ? 0.01 ? 0.1 ? 1 collector saturation voltage : v ce (sat) (v) ? 10 i c /i b = 20/1 ? 0.001 ? 0.01 ? 0.1 ? 1 ? 10 collector current : i c (a) fig.6 collector-emitter saturation voltage vs. collector current ( ? ) ? 0.01 ? 0.1 ? 1 collector saturation voltage : v ce (sat) (v) ? 10 ta = 25 c ta = ? 40 c ta = 125 c i c /i b = 10/1 0.001 0.01 0.1 1 10 emitter current : i e (a) fig.8 transition frequency transition frequency : ft (mhz) 1000 ta = 25 c v ce = ? 10v 1 10 100 ? 0.1 ? 1 ? 10 ? 100 collector to base voltage : v cb (v) fig.9 collector output capacitance 1 10 100 collector output capacitance : cob (pf) 1000 ta = 25 c f = 1mhz collector current : i c (a) fig.7 base-emitter saturation voltage vs. collecter current ? 0.01 ? 0.1 ? 1 base emitter saturation voltage : v be (sat) (v) ? 10 i c /i b = 10/1 ta = 125 c ta = 25 c ta = ? 40 c ? 0.001 ? 0.01 ? 0.1 ? 1 ? 10 fig.2 grounded emitter output characteristics ? 0.001 ? 0.01 ? 0.1 ? 1 ? 10 collector current : i c (a) fig.4 dc current gain vs. collector current ( ) 1 10 100 dc current gain : h fe 1000 v ce = ? 2v ta = 25 c ta = ? 40 c ta = 125 c -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 -2.0 -1.5 -1.0 -0.5 0.0 i b =10m a i b =1ma i b =2ma i b =3ma i b =4ma i b =5ma i b =6ma i b = 7ma i b =8ma i b =9ma collector current b ic(a) collector to emitter voltage b v ce (v)
MP6Z3 transistors rev.a 6/6 ? 0.01 ? 0.1 ? 1 ? 10 collector current : i c (a) fig.10 switching time 10 100 switching time : (ns) 1000 ta = 25 c v cc = ? 25v i c /i b = 10/1 tstg tf ton z z switching characteristics measurement circuits v in p w r l = 8.3 i c i b1 i b2 p w 50 s duty cycle 1% v cc ? 25v ton tstg tf i c i b2 i b1 90% 10% base current waveform collector current waveform fig.12 safe operating area 0.01 0.1 1 10 0.001 0.1 10 1000 pulse width : pw(s) normalized transient thermal resistance : r(t ) ta=25 =? fig.11 normalized thermal resistance (element) 0.01 0.1 1 10 0.1 1 10 100 collector to emitter voltage : v ce (-v) collector current : i c (a) 1ms 100ms 10ms dc - - - - ----- ta=25 =? sing le pulse
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